CSD85301Q2T
RoHS 
RoHS compliant
RoHS compliantPackage 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 5A 6WSON
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Buying Options
Total Price: USD $1.03
Unit Price: USD $1.0296
≥1 USD $1.0296
≥10 USD $0.83952
≥100 USD $0.653312
Inventory: 1119
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Dimensions
Thickness 750μm
Width 2mm
Length 2mm
Technical
FET Feature Logic Level Gate, 5V Drive
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 3.8 mJ
Drain to Source Breakdown Voltage 20V
Drain-source On Resistance-Max 0.039Ohm
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 10V
Threshold Voltage 900mV
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 14 ns
Fall Time (Typ) 15 ns
Drain to Source Voltage (Vdss) 20V
Rise Time 26 ns
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 469pF @ 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 27m Ω @ 5A, 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 6 ns
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Number of Channels 2
Number of Elements 2
Base Part Number CSD85301
Terminal Form NO LEAD
Max Power Dissipation 2.3W
Additional Feature AVALANCHE RATED
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Series NexFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 9.695537mg
Number of Pins 6
Package / Case 6-WDFN Exposed Pad
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Factory Lead Time 12 Weeks
Alternative Model
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