Feedback Cap-Max (Crss) 144 pF
Drain to Source Resistance 9.9mOhm
FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 8A
Turn-Off Delay Time 711 ns
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 10.9nC @ 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250μA
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Common Drain
Turn On Delay Time 205 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number CSD83325
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 2.3W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ