CSD75301W1015
RoHS 
RoHS compliant
RoHS compliantPackage 6-UFBGA, DSBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
NexFET? Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Mosfet Array 2.1nC @ 4.5V 1.2A 800mW 16ns
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Buying Options
Total Price: USD $8.59
Unit Price: USD $8.588
≥1 USD $8.588
≥10 USD $7.0471
≥100 USD $6.8267
≥500 USD $6.6063
≥1000 USD $6.3859
Inventory: 1228
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Max Power Dissipation 800mW
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD75301
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 800mW
Turn On Delay Time 3 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 4.5V
Rise Time 1.7ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 1.2A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.19Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs -700 mV
Feedback Cap-Max (Crss) 31 pF
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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