FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) -6V
Continuous Drain Current (ID) 3.9A
Turn-Off Delay Time 32.1 ns
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 595pF @ 10V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Rds On (Max) @ Id, Vgs 162m Ω @ 1A, 1.8V
FET Type 2 P-Channel (Dual) Common Source
Turn On Delay Time 12.8 ns
Base Part Number CSD75207
Max Power Dissipation 700mW
Subcategory Other Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ