CSD75205W1015
RoHS 
RoHS compliant
RoHS compliantPackage 6-UFBGA, DSBGA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
DUAL P CH POWER MOSFET, -20V, -1.2A, DSBGA-6 - More Details
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Buying Options
Total Price: USD $1.66
Unit Price: USD $1.65965
≥1 USD $1.65965
≥10 USD $1.36135
≥100 USD $1.31955
≥500 USD $1.2768
≥1000 USD $1.23405
Inventory: 1098
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 750mW
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD75205
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 750mW
Turn On Delay Time 6.3 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 265pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.2nC @ 4.5V
Rise Time 5.3ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 32 ns
Continuous Drain Current (ID) 1.2A
Threshold Voltage -650mV
Gate to Source Voltage (Vgs) -6V
Drain-source On Resistance-Max 0.18Ohm
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 33 pF
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Alternative Model
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