Feedback Cap-Max (Crss) 55 pF
Drain to Source Resistance 80mOhm
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -20V
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) -6V
Continuous Drain Current (ID) -3A
Turn-Off Delay Time 45 ns
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 3A
Input Capacitance (Ciss) (Max) @ Vds 410pF @ 10V
Vgs(th) (Max) @ Id 900mV @ 250μA
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Turn On Delay Time 7.8 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number CSD75204
Max Power Dissipation 700mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ