STS9D8NH3LL
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 8A/9A 8SOIC
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Buying Options
Total Price: USD $0.5
Unit Price: USD $0.4978
≥1 USD $0.4978
≥10 USD $0.4085
≥100 USD $0.39615
≥500 USD $0.38285
≥1000 USD $0.3705
Inventory: 22379
Minimum: 1
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series STripFET?
JESD-609 Code e4
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 22MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS9D8
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 857pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A 9A
Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Rise Time 32ns
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 8A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 150 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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