FET Feature Logic Level Gate
Power Dissipation-Max (Abs) 3.2W
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 72 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 32A
Drain-source On Resistance-Max 0.026Ohm
Drain Current-Max (Abs) (ID) 8A
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Current - Continuous Drain (Id) @ 25°C 8A Ta
Input Capacitance (Ciss) (Max) @ Vds 1340pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 24m Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, STripFET? F6
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ