FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 40A
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 10A
Turn-Off Delay Time 21.1 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 724pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 19m Ω @ 5A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 2.7W
Subcategory FET General Purpose Power
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ