FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 20V
Drain-source On Resistance-Max 0.075Ohm
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 125 ns
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 16V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 55m Ω @ 2.5A, 10V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Max Power Dissipation 1.6W
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ