FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 0.055Ohm
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 45 ns
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 45m Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Peak Reflow Temperature (Cel) 260
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Series Automotive, AEC-Q101, STripFET? II
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ