FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 16A
Drain to Source Breakdown Voltage 20V
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 125 ns
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Subcategory Other Transistors
Additional Feature LOW THRESHOLD
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ