FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 16A
Drain to Source Breakdown Voltage 60V
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 15V
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 45 ns
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 55m Ω @ 2A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ