FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 16A
Drain to Source Breakdown Voltage 60V
Drain-source On Resistance-Max 0.065Ohm
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 530mA
Turn-Off Delay Time 39 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate Charge (Qg) (Max) @ Vgs 20.4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 4A 3A
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 55m Ω @ 2A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 500mW
Subcategory Other Transistors
Additional Feature LOW THRESHOLD
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ