FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -60V
Drain-source On Resistance-Max 0.16Ohm
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 16V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 39 ns
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 15.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 630pF @ 25V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 120m Ω @ 1.5A, 10V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Subcategory Other Transistors
Additional Feature LOW THRESHOLD
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ