STS3DNE60L
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 60V 3A 8SOIC
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Radiation Hardening No
Technical
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 60V
Drain-source On Resistance-Max 0.1Ohm
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3A
Fall Time (Typ) 16 ns
Drain to Source Voltage (Vdss) 60V
Rise Time 30ns
Gate Charge (Qg) (Max) @ Vgs 13.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 815pF @ 25V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 1.5A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 20 ns
Power Dissipation 2W
Operating Mode ENHANCEMENT MODE
Number of Elements 2
Pin Count 8
Base Part Number STS3D
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Max Power Dissipation 2W
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Part Status Obsolete
JESD-609 Code e4
Series STripFET?
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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