FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.145Ohm
Drain Current-Max (Abs) (ID) 3A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 33 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 145m Ω @ 1.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Subcategory Other Transistors
Terminal Finish NICKEL PALLADIUM GOLD
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ