Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 121pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 10V
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 18V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.15Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 9A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate