STS1DNC45
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N-Ch 450 Volt 0.4 A
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Buying Options
Total Price: USD $1.83
Unit Price: USD $1.8304
≥1 USD $1.8304
≥10 USD $1.52328
≥100 USD $1.2122
≥500 USD $1.025693
≥1000 USD $0.870276
Inventory: 5719
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Voltage - Rated DC 450V
Max Power Dissipation 1.6W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 400mA
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS1D
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 6.7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time 4 ns
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 400mA
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 0.4A
Drain to Source Breakdown Voltage 450V
Pulsed Drain Current-Max (IDM) 1.6A
Avalanche Energy Rating (Eas) 30 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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