STS10DN3LH5
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 10A 8-SOIC
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Buying Options
Total Price: USD $1.2
Unit Price: USD $1.1968
≥1 USD $1.1968
≥10 USD $0.97944
≥100 USD $0.761904
≥500 USD $0.645797
≥1000 USD $0.526073
Inventory: 1267
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 14 Weeks
Lifecycle Status NRND (Last Updated: 8 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series STripFET? V
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 21MOhm
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory FET General Purpose Power
Max Power Dissipation 2.5W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STS10
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 4 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 5V
Rise Time 22 ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 22V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
Avalanche Energy Rating (Eas) 50 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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