FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 32.5 ns
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 668pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 30m Ω @ 4A, 10V
FET Type 2 N-Channel (Dual)
Max Power Dissipation 65W
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, STripFET? III
Packaging Tape & Reel (TR)
Operating Temperature -55°C~175°C TJ