FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 190 mJ
Pulsed Drain Current-Max (IDM) 31.2A
Drain to Source Breakdown Voltage 100V
Drain-source On Resistance-Max 0.05Ohm
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 50.6 ns
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 970pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 35m Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 8.7 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 70W
Subcategory FET General Purpose Powers
Additional Feature AVALANCHE RATED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series Automotive, AEC-Q101, STripFET? III
Operating Temperature -55°C~175°C TJ