STL7DN6LF3
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET Dual N-Ch 60V 35mOhm 6.5A STripFET III
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Buying Options
Total Price: USD $1.65
Unit Price: USD $1.6544
≥1 USD $1.6544
≥10 USD $1.37192
≥100 USD $1.091904
≥500 USD $0.923912
≥1000 USD $0.783922
Inventory: 11728
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, STripFET? III
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Max Power Dissipation 52W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Base Part Number STL7D
JESD-30 Code R-PDSO-F6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 52W
Case Connection DRAIN
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 43m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 432pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V
Drain to Source Voltage (Vdss) 60V
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.06Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 26A
Avalanche Energy Rating (Eas) 190 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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