FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Programmable I/O 114
Pulsed Drain Current-Max (IDM) 76A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 19A
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 65A
Number of Timers/Counters 14
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 6.5m Ω @ 9.5A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Interface CAN, I2C, I2S, SPI, UART, USART, USB
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 60W
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ