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STL65DN3LLH5

STMicroelectronics
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Dual N-Channel 30 V 0.0065 Ohm SMT STripFET V Power MosFet - PowerFLAT 5x6
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Buying Options
Total Price: USD $1.38
Unit Price: USD $1.3832
≥1 USD $1.3832
≥10 USD $1.13525
≥100 USD $1.09915
≥500 USD $1.064
≥1000 USD $1.02885
Inventory: 50835
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Programmable I/O 114
Pulsed Drain Current-Max (IDM) 76A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 19A
Max Frequency 120MHz
Core Architecture ARM
Gate to Source Voltage (Vgs) 22V
Continuous Drain Current (ID) 65A
Number of Timers/Counters 14
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 6.5m Ω @ 9.5A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Data Bus Width 32b
Watchdog Timer Yes
Case Connection DRAIN
Power Dissipation 60W
Operating Mode ENHANCEMENT MODE
Memory Type FLASH
RAM Size 132kB
Element Configuration Dual
Memory Size 768kB
Interface CAN, I2C, I2S, SPI, UART, USART, USB
Number of Elements 2
JESD-30 Code R-PDSO-N6
Pin Count 8
Base Part Number STL65
Time@Peak Reflow Temperature-Max (s) 30
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 60W
Subcategory FET General Purpose Power
Terminal Finish Matte Tin (Sn)
Resistance 6.5MOhm
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Series STripFET? V
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 7 months ago)

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