STL60N32N3LL
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET Dual N-Ch 30V 15A pwr MOSFET
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Buying Options
Total Price: USD $27.65
Unit Price: USD $27.64975
≥1 USD $27.64975
≥10 USD $22.68695
≥100 USD $21.97825
≥500 USD $21.2686
≥1000 USD $20.5599
Inventory: 1123
Minimum: 1
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Technical Details
Technical
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Subcategory FET General Purpose Power
Max Power Dissipation 50W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STL60
Pin Count 8
JESD-30 Code R-PDSO-N4
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
Power - Max 23W 50W
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.2m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 1V @ 1μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 32A 60A
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
Rise Time 30ns
Fall Time (Typ) 12 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 60A
Series STripFET?
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 32A
Drain-source On Resistance-Max 0.12Ohm
Drain to Source Breakdown Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerVDFN
Mounting Type Surface Mount
Mount Surface Mount
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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