Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Max Power Dissipation 60W
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 475pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 22V
Drain Current-Max (Abs) (ID) 11A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 44A
FET Technology METAL-OXIDE SEMICONDUCTOR