STL36DN6F7
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2 N-CH 60V 33A POWERFLAT
PDF
/
Buying Options
Total Price: USD $0.92
Unit Price: USD $0.924
≥1 USD $0.924
≥10 USD $0.75944
≥100 USD $0.590392
≥500 USD $0.500403
≥1000 USD $0.407634
Inventory: 1272
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 38 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Physical
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Surface Mount YES
Transistor Element Material SILICON
Manufacturer Package Identifier PowerFLATTM_8256945_DI_typeC
Technical
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STL36
JESD-30 Code R-PDSO-F6
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 58W
Case Connection DRAIN
Turn On Delay Time 7.85 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 30V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Turn-Off Delay Time 12.1 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 36A
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 144A
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 175°C
FET Feature Standard
Dimensions
Height 1mm
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
STL36DN6F7+price,STL36DN6F7+datasheet,STL36DN6F7+in stock,buy+STL36DN6F7,finder+STL36DN6F7,STL36DN6F7+tutorials,STL36DN6F7+download