FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 100V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 20A
Turn-Off Delay Time 11 ns
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 408pF @ 50V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Rds On (Max) @ Id, Vgs 67m Ω @ 2.5A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 6.3 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 62.5W
Subcategory FET General Purpose Powers
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VII
Operating Temperature -55°C~150°C TJ