FET Feature Logic Level Gate
Continuous Drain Current (ID) 13A
Drain to Source Voltage (Vdss) 100V
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 864pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 180m Ω @ 1.7A, 10V
FET Type 2 P-Channel (Dual)
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 62.5W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Series DeepGATE?, STripFET? VI
Operating Temperature -55°C~150°C TJ