FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 20V
Drain-source On Resistance-Max 0.045Ohm
Drain Current-Max (Abs) (ID) 5A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 5A
Turn-Off Delay Time 27 ns
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 15V
Vgs(th) (Max) @ Id 600mV @ 250μA
Rds On (Max) @ Id, Vgs 40m Ω @ 2.5A, 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.5W
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ