FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 60 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 15A
Drain-source On Resistance-Max 0.1Ohm
Drain Current-Max (Abs) (ID) 7A
Continuous Drain Current (ID) 7A
Polarity/Channel Type P-CHANNEL
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 100m Ω @ 3.5A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 4.8W
Number of Terminations 15
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ