FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 1.3 mJ
DS Breakdown Voltage-Min 60V
Pulsed Drain Current-Max (IDM) 12A
Drain-source On Resistance-Max 0.223Ohm
Drain Current-Max (Abs) (ID) 3A
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 30V
Vgs(th) (Max) @ Id 2.7V @ 50μA
Rds On (Max) @ Id, Vgs 153m Ω @ 3A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature 150°C TJ