FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) -12V
Continuous Drain Current (ID) 1A
Turn-Off Delay Time 25 ns
Polarity/Channel Type N-CHANNEL
Drain to Source Voltage (Vdss) 30V 20V
Gate Charge (Qg) (Max) @ Vgs 2nC @ 5V
Current - Continuous Drain (Id) @ 25°C 1.4A 1A
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 240m Ω @ 1.4A, 10V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Subcategory Other Transistors
Terminal Finish Tin/Copper (Sn/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ