FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 1.4A
Turn-Off Delay Time 13 ns
Gate Charge (Qg) (Max) @ Vgs 2nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 70pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 240m Ω @ 1.4A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Subcategory FET General Purpose Power
Terminal Finish Tin/Copper (Sn/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ