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RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 2.5A TSST8
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Total Price: USD $0.53
Unit Price: USD $0.528
≥1 USD $0.528
≥10 USD $0.46112
Inventory: 37
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No

Technical

FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.13Ohm
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2.5A
Turn-Off Delay Time 20 ns
Fall Time (Typ) 20 ns
Drain to Source Voltage (Vdss) 30V
Rise Time 30ns
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Rds On (Max) @ Id, Vgs 90m Ω @ 2.5A, 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 7 ns
Power Dissipation 1.25W
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Pin Count 8
Base Part Number *K2
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.25W
Subcategory FET General Purpose Power
Terminal Finish TIN COPPER
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Pbfree Code yes
JESD-609 Code e2
Published 2015
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Mount Surface Mount

Supply Chain

Factory Lead Time 10 Weeks

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