FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.13Ohm
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2.5A
Turn-Off Delay Time 20 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Rds On (Max) @ Id, Vgs 90m Ω @ 2.5A, 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.25W
Subcategory FET General Purpose Power
Terminal Finish TIN COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature 150°C TJ