TT8K1TR
RoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 2.5A TSST8
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Buying Options
Total Price: USD $0.32
Unit Price: USD $0.323
≥1 USD $0.323
≥10 USD $0.26505
≥100 USD $0.2565
≥500 USD $0.24795
≥1000 USD $0.24035
Inventory: 5807
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2010
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory FET General Purpose Power
Max Power Dissipation 1W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 8
JESD-30 Code R-PDSO-F8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 1W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 3.6nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 2.5A
Drain-source On Resistance-Max 0.09Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.5V Drive
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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