Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 61m Ω @ 2.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
Drain to Source Voltage (Vdss) 12V
Turn-Off Delay Time 130 ns
Continuous Drain Current (ID) 2.5A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.061Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR