Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 51m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A 3.5A
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 5V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5A
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Subcategory Other Transistors
Terminal Finish TIN COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ