SP8M6FRATB
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
4V DRIVE NCH+PCH MOSFET
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Buying Options
Total Price: USD $6.25
Unit Price: USD $6.25195
≥1 USD $6.25195
≥10 USD $5.13
≥100 USD $4.96945
≥500 USD $4.80985
≥1000 USD $4.6493
Inventory: 1097
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C
Packaging Cut Tape (CT)
Published 2016
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 51m Ω @ 5A, 10V, 90m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V 490pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 5V, 5.5nC @ 5V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 5A
Drain-source On Resistance-Max 0.082Ohm
Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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