SP8M24FRATB
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
4V DRIVE NCH+PCH MOSFET (CORRESP
PDF
/
Buying Options
Total Price: USD $10.07
Unit Price: USD $10.0719
≥1 USD $10.0719
≥10 USD $8.26405
≥100 USD $8.0066
≥500 USD $7.7482
≥1000 USD $7.4898
Inventory: 1164
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 2W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 46m Ω @ 4.5A, 10V, 63m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V 1700pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 5V, 18.2nC @ 5V
Drain to Source Voltage (Vdss) 45V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain Current-Max (Abs) (ID) 4.5A
Drain-source On Resistance-Max 0.064Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 45V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
Recommended For You
SP8M24FRATB+price,SP8M24FRATB+datasheet,SP8M24FRATB+in stock,buy+SP8M24FRATB,finder+SP8M24FRATB,SP8M24FRATB+tutorials,SP8M24FRATB+download