FET Technology METAL-OXIDE SEMICONDUCTOR
Drain-source On Resistance-Max 0.056Ohm
Continuous Drain Current (ID) 4.5A
Polarity/Channel Type P-CHANNEL
Drain to Source Voltage (Vdss) 30V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Subcategory Other Transistors
Terminal Finish TIN COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)