FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 30V
Drain-source On Resistance-Max 0.077Ohm
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3.5A
Turn-Off Delay Time 29 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 285pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Rds On (Max) @ Id, Vgs 54m Ω @ 3.5A, 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.25W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ