FET Feature Logic Level Gate, 1.5V Drive
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -12V
Drain-source On Resistance-Max 0.036Ohm
Drain Current-Max (Abs) (ID) 4A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 4A
Turn-Off Delay Time 300 ns
Drain to Source Voltage (Vdss) 12V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1940pF @ 6V
Vgs(th) (Max) @ Id 1V @ 1mA
Rds On (Max) @ Id, Vgs 36m Ω @ 4A, 4.5V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 550mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ