QS8J1TR
RoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 12V 4.5A TSMT8
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Buying Options
Total Price: USD $0.99
Unit Price: USD $0.9856
≥1 USD $0.9856
≥10 USD $0.80608
≥100 USD $0.627176
≥500 USD $0.531573
≥1000 USD $0.433022
Inventory: 1085
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 52 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Max Power Dissipation 1.25W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *J1
Pin Count 8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 12 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 29m Ω @ 4.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 6V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Rise Time 75ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 215 ns
Turn-Off Delay Time 390 ns
Continuous Drain Current (ID) 4.5A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.029Ohm
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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