QS6M3TR
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V/20V 1.5A TSMT6
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Buying Options
Total Price: USD $0.53
Unit Price: USD $0.528
≥1 USD $0.528
≥10 USD $0.4488
≥100 USD $0.31196
≥500 USD $0.243584
≥1000 USD $0.197982
Inventory: 1273
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 25 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 360MOhm
Subcategory Other Transistors
Max Power Dissipation 900mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1.5A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *M3
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.6nC @ 4.5V
Rise Time 12 ns
Drain to Source Voltage (Vdss) 30V 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 12 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 1.5A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.5 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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