QS6K1TR
RoHS 
RoHS compliant
RoHS compliantPackage SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 1A TSMT6
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Buying Options
Total Price: USD $0.58
Unit Price: USD $0.5808
≥1 USD $0.5808
≥10 USD $0.49984
≥100 USD $0.345928
≥500 USD $0.28908
≥1000 USD $0.246022
Inventory: 9973
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 364MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Max Power Dissipation 900mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 1A
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number *K1
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 7 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 238m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 77pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V
Rise Time 7 ns
Fall Time (Typ) 7 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 1A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 1A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Nominal Vgs 1.5 V
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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