FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 8A
Drain to Source Breakdown Voltage 30V
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 21 ns
Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Rds On (Max) @ Id, Vgs 100m Ω @ 2A, 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual) Common Source
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.25W
Subcategory FET General Purpose Power
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ