QH8MA2TCR
RoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V 4.5A/3A TSMT8
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Buying Options
Total Price: USD $0.5
Unit Price: USD $0.5016
≥1 USD $0.5016
≥10 USD $0.43296
≥100 USD $0.299992
≥500 USD $0.250642
≥1000 USD $0.213312
Inventory: 1096
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2014
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Max Power Dissipation 1.25W
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F8
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 365pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A 3A
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 10V
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 3A
Drain Current-Max (Abs) (ID) 4.5A
Drain-source On Resistance-Max 0.0056Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 1.5 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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