QH8KA1TCR
RoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
30V NCH+NCH POWER MOSFET
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5368
≥1 USD $0.5368
≥10 USD $0.462
≥100 USD $0.319968
≥500 USD $0.267344
≥1000 USD $0.227533
Inventory: 1169
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 0.65 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 12A
Drain-source On Resistance-Max 0.073Ohm
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 3nC @ 10V
Current - Continuous Drain (Id) @ 25°C 4.5A
Input Capacitance (Ciss) (Max) @ Vds 125pf @ 15V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 73m Ω @ 4.5A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Power - Max 2.4W
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
JESD-30 Code R-PDSO-F8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) NOT SPECIFIED
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Published 2015
Packaging Cut Tape (CT)
Operating Temperature 150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Supply Chain
Factory Lead Time 20 Weeks
Alternative Model
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