FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.032Ohm
Drain Current-Max (Abs) (ID) 8A
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 7.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 25m Ω @ 8A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Subcategory FET General Purpose Power
Terminal Finish TIN COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ