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RoHS
RoHS RoHS compliant
Package 6-SMD, Flat Leads
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 30V 8A MPT6
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 30V
Drain-source On Resistance-Max 0.032Ohm
Drain Current-Max (Abs) (ID) 8A
Continuous Drain Current (ID) 8A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 7.3nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 470pF @ 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Rds On (Max) @ Id, Vgs 25m Ω @ 8A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Power - Max 2W
Case Connection DRAIN
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-PDSO-F6
Pin Count 6
Base Part Number *K14
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 2W
Subcategory FET General Purpose Power
Terminal Finish TIN COPPER
ECCN Code EAR99
Number of Terminations 6
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e2
Published 2011
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ

Physical

Transistor Element Material SILICON
Package / Case 6-SMD, Flat Leads
Mounting Type Surface Mount
Mount Surface Mount

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